emt1 / umt1n / imt1a transistors rev.c 1 / 3 general purpose transistor (isolated dual transistors) emt1 / umt1n / imt1a z features 1) two 2sa1037ak chips in a emt or umt or smt package. 2) mounting possible with emt3 or umt3 or smt3 automatic mounting machines. 3) transistor elements are independent, eliminating interference. z structure epitaxial planar type pnp silicon transistor z equivalent circuit emt1 / umt1n imt1a tr 2 tr 1 (3) (2) (1) (4) (5) (6) tr 2 tr 1 (4) (5) (6) (3) (2) (1) the following characteristics apply to both tr 1 and tr 2 . z absolute maximum ratings (ta = 25 c) parameter symbol v cbo v ceo v ebo i c tj tstg p c emt1, umt1n imt1a limits ?60 ?50 ?6 ?150 150 ?55 to +150 150 (total) 300 (total) unit v v v ma c c mw ? 1 ? 2 collector-base voltage collector-emitter voltage emitter-base voltage collector current junction temperature storage temperature collector power dissipation ?1 120mw per element must not be exceeded. ?2 200mw per element must not be exceeded. z dimensions (unit : mm) rohm : emt6 emt1 rohm : umt6 eiaj : sc-88 umt1n (6) (5) (4) (1) (2) (3) (6) (5) (4) (1) (2) (3) (4) (5) (6) (3) (2) (1) rohm : smt6 eiaj : sc-74 imt1a abbreviated symbol : t1 abbreviated symbol : t1 abbreviated symbol : t1 each lead has same dimensions each lead has same dimensions each lead has same dimensions
emt1 / umt1n / imt1a transistors rev.c 2 / 3 z electrical characteristics (ta = 25 c) parameter symbol bv cbo bv ceo bv ebo i cbo i ebo h fe v ce(sat) f t cob min. ?60 ?50 ?6 ? ? 120 ? ? ? ? ? ? ? ? ? ? 140 4 ? ? ? ?0.1 ?0.1 560 ?0.5 ? 5 vi c = ?50a i c = ?1ma i e = ?50a v cb = ?60v v eb = ?6v v ce = ?6v, i c = ?1ma v ce = ?12v, i e = 2ma, f = 100mhz i c /i b = ?50ma/?5ma v cb = ?12v, i e = 0a, f = 1mhz v v a a ? v mhz pf typ. max. unit conditions collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current dc current transfer ratio collector-emitter saturation voltage transition frequency output capacitance z packaging specifications package taping code umt1n emt1 type imt1a tn 3000 t2r 8000 ? ? ? t110 3000 ? ? ? basic ordering unit (pieces) z electrical characteristic curves -0.2 collector current : ic (ma) -50 -20 -10 -5 -2 -1 -0.5 -0.2 -0.1 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 v ce = ?6v base to emitter voltage : v be (v) fig.1 grounded emitter propagation characteristics ta = 100c 25c ? 40c -0.4 -4 -8 -1.2 0 -2 -6 -10 -0.8 -1.6 -2.0 -3.5a -7.0 -10.5 -14.0 -17.5 -21.0 -24.5 -28.0 -31.5 i b = 0 ta = 25c -35.0 collector current : i c (ma) collector to emitter voltage : v ce (v) fig.2 grounded emitter output characteristics ( ) -40 -80 -5 -3 -4 -2 -1 -20 -60 -100 0 i b = 0 ta = 25c collector current : i c (ma) collector to emitter voltage : v ce (v) fig.3 grounded emitter output characteristics ( ? ) -50a -100 -150 -200 -250 -500 -450 -400 -350 -300 500 200 100 50 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 dc current gain : h fe ta = 25c v ce = -5v -3v -1v collector current : i c (ma) fig.4 dc current gain vs. collector current ( ) 500 200 100 50 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 dc current gain : h fe collector current : i c (ma) fig.5 dc current gain vs. collector current ( ? ) v ce = -6v ta = 100c -40c 25c -0.1 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 -1 -0.5 -0.2 -0.05 ta = 25c collector saturation voltage : v ce(sat) (v) collector current : i c (ma) fig.6 collector-emitter saturation voltage vs. collector current ( ) i c /i b = 50 20 10
emt1 / umt1n / imt1a transistors rev.c 3 / 3 -0.1 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 -1 -0.5 -0.2 -0.05 collector saturation voltage : v ce(sat) (v) collector current : i c (ma) fig.7 collector-emitter saturation voltage vs. collector current ( ? ) l c /l b = 10 ta = 100c 25c -40c 50 100 0.5 20 50 100 200 500 1000 12 510 emitter current : i e (ma) transition frequency : f t (mhz) fig.8 gain bandwidth product vs. emitter current ta = 25 c v ce = - 12v collector to base voltage : v cb (v) emitter to base voltage : v eb (v) collector output capacitance : cob ( pf) emitter input capacitance : cib ( pf) collector output capacitance vs. emitter input capacitance vs. collector-base voltage emitter-base voltage fig.9 -0.5 -20 2 5 10 -1 -2 -5 -10 20 cib cob ta = 25 c f = 1mhz i e = 0a i c = 0a
notes no technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of rohm co.,ltd. the contents described herein are subject to change without notice. the specifications for the product described in this document are for reference only. upon actual use, therefore, please request that specifications to be separately delivered. application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. rohm co.,ltd. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by rohm co., ltd. is granted to any such buyer. products listed in this document are no antiradiation design. appendix1-rev2.0 thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact your nearest sales office. rohm customer support system the americas / europe / asia / japan contact us : webmaster@ rohm.co. jp www.rohm.com copyright ? 2008 rohm co.,ltd. the products listed in this document are designed to be used with ordinary electronic equipment or de vices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. it is our top priority to supply products with the utmost quality and reliability. however, there is always a chance of failure due to unexpected factors. therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. rohm cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the notes specified in this catalog. 21 saiin mizosaki- cho, ukyo-ku, kyoto 615-8585, japan tel : +81-75-311-2121 fax : +81-75-315-0172 appendix
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